To study the Single Event Upset(SEU) mechanism in different regions of Integrated Circuits(IC),a SEU mapping system was established on heavy ion micro-beam facility in Beijing HI-13 Tandem Accelerator.It produces micron-resolution maps when single-event upsets occur during ion irradiation of integrated circuits.From these upset maps,the identity and size of a circuit’s upset-prone components can be directly determined.Utilizing this system,a 2 kbit Static Random Access Memory(SRAM)(made in China) SEU map was obtained,which accorded well with the theoretical results and the earlier experiment results.