Influence of high temperature annealing on AC electric properties of SiO2 thin layers implanted with In and Sb ions

This paper presents results of AC measurements of resistance Rp, phase angle θ, capacity Cp and loss tangent tgδ in dependences on frequency and temperature for InSb-SiO2/Si nanocomposite, immediately after preparation and annealed at 1273 K. The material was obtained by the In+ and Sb+ ions implantation into a SiO2 thin layer. Using obtained parameters frequency dependence of conductivity σ, real and imaginary components of permittivity were determined. This work refers to the hopping mechanism of conductivity and relaxation mechanisms of prepared material.