BLUE TEMPERATURE-INDUCED SHIFT AND BAND-TAIL EMISSION IN INGAN-BASED LIGHT SOURCES
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Petr G. Eliseev | Jinhyun Lee | Piotr Perlin | M. Osinski | M. Osiński | P. Eliseev | P. Perlin | Jinhyun Lee
[1] H. Amano,et al. Shortest wavelength semiconductor laser diode , 1996 .
[2] Takashi Mukai,et al. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes , 1995 .
[3] Shuji Nakamura,et al. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm , 1997 .
[4] Petr G. Eliseev,et al. Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes , 1996 .
[5] S. Nakamura,et al. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes , 1996 .
[6] Petr G. Eliseev,et al. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells , 1997 .
[7] S. Nakamura,et al. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures , 1996 .
[8] S. Nakamura,et al. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes , 1996 .
[9] M. Osiński,et al. Optical and Electrical Characteristics of Single-Quantum-Well InGaN Light-Emitting Diodes , 1996 .
[10] J. Pankove,et al. Study of defect states in GaN films by photoconductivity measurement , 1995 .