论文信息 - TCAD investigation on hot-electron injection in new-generation technologies

TCAD investigation on hot-electron injection in new-generation technologies

Abstract The hot electron injection model presently available in the TCAD tools has been investigated against experiments on new test devices to the purpose of gaining an insight on its predictability in the context of the new-generation technologies. The study has been carried out on electron emission in extremely high electric fields, as expected in power LDMOS devices at the onset of avalanche breakdown, reaching for the first time injection probabilities as high as 0.01. The numerical analysis clearly showed that the new Si/SiO2 interfaces experience different features with respect to the old ones. The TCAD method based on the deterministic solution of the Boltzmann equation can accurately capture such effects.

[1] C. Y. Ng,et al. Dependence of barrier height and effective mass on nitrogen concentration at SiOxNy/Si interface and gate oxide thickness , 2006 .

[2] Tak H. Ning,et al. Emission probability of hot electrons from silicon into silicon dioxide , 1977 .

[3] Mattia Rossetti,et al. Effect of Reverse Body Bias on Hot Carrier Induced Degradation of n-MOSFETs , 2018, IEEE Transactions on Device and Materials Reliability.

[4] F. M. Bufler,et al. Gate Current Calculations Using Spherical Harmonic Expansion of Boltzmann Equation , 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.

[5] Pierpaolo Palestri,et al. On the accuracy of current TCAD hot carrier injection models in nanoscale devices , 2010 .

[6] C. Jungemann,et al. An Efficient Approach to Include Full-Band Effects in Deterministic Boltzmann Equation Solver Based on High-Order Spherical Harmonics Expansion , 2011, IEEE Transactions on Electron Devices.

[7] S. Laux,et al. Understanding hot‐electron transport in silicon devices: Is there a shortcut? , 1995 .

[8] F. Mcfeely,et al. Impact ionization in silicon , 1993 .

[9] M. Jurczak,et al. Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics , 2005 .