论文信息 - Silicon gate technology

Silicon gate technology

Abstract This paper describes the technology and characteristics of insulated-gate field-effect transistor integrated circuits using deposited polycrystalline silicon as the gate electrode. After a brief outline of the characteristics of the silicon gate technology, some of the basic properties of the silicon-silicon dioxide-silicon system, the processing steps for the fabrication of silicon-gate devices, and the electrical characteristics of the devices obtained will be reviewed. A comparison between silicon gate technology and standard technology will be carried out, using the 3705, an eight-channel multiplexer switch with decoding logic. Design considerations for silicon gate technology and some design examples will be given.

F. Faggin | F. Faggin | T. Klein | T. Klein

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