论文信息 - 1.9-GHz single balanced diode mixer fabricated on Al2O3 substrate by thin film technology

1.9-GHz single balanced diode mixer fabricated on Al2O3 substrate by thin film technology

A passive balun using spiral inductors and inter-digital capacitors has been developed for a 1.9 GHz balanced diode mixer on Al2O3 substrates. Using this passive balun on the input port (RF port and LO port) of mixer circuit and incorporating the Schottky diode, where I-V model and small signal RF model have been established, a wideband signal balanced diode mixer was designed, fabricated and measured.

Yi-Jen Chan | Yen-Heng Lin

[1] G. S. Dow,et al. A Q-band monolithic balanced diode mixer using AlGaAs/GaAs HEMT and CPW hybrid , 1990, IEEE International Digest on Microwave Symposium.

[2] Ulrich L. Rohde,et al. Microwave Circuit Design Using Linear and Nonlinear Techniques: Vendelin/Microwave Circuit Design Using Linear and Nonlinear Techniques , 1990 .