Reliability of 1300-nm spot-size converted lasers for low-cost optical module used in fiber-to-the-home

We report the degradation mode of a InP strained QW spot-size converted (SSC) laser. We succeed in suppressing a buried heterointerface degradation with a combination of MOVPE growth and dry etching techniques (2-inch wafer process). The far-field patterns and wide-temperature operation required for low-cost system application scarcely changed during degradation, and the device life is at least 10/sup 5/ hours at 60/spl deg/C, 10 mW.