论文信息 - Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells

Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells

In this work, we study the impact of Si and Al implantation on the current conduction mechanisms and operation of 1T-1R TiN/HfO2/Ti/TiN based ReRAM devices. The pre-forming current and forming voltage evolution clearly reveal different trends as a function of the implanted dose and species. We link our results to the microscopic structure of the material using a first principles approach.

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