论文信息 - Monolithic integration of an injection laser and a metal semiconductor field effect transistor

Monolithic integration of an injection laser and a metal semiconductor field effect transistor

A new laser structure, the ’’T‐laser’’, has been monolithically integrated with a MESFET on a semi‐insulating GaAs substrate. Integration is achieved by means of a compatible structure in which the optically active layer of the laser also serves as the electrically active layer of the MESFET. Direct modulation of the laser by means of the transistor is demonstrated.

Amnon Yariv | Israel Ury | Shlomo Margalit | M. Yust

[1] H. Namizaki,et al. High temperature single‐mode cw operation with a junction‐up TJS laser , 1978 .

[2] A. Yariv,et al. GaAs‐GaAlAs injection lasers on semi‐insulating substrates using laterally diffused junctions , 1978 .

[3] Double‐heterostructure GaAs‐GaAlAs injection lasers on semi‐insulating substrates using carrier crowding , 1977 .

[4] A. Yariv,et al. Integration of an injection laser with a Gunn oscillator on a semi‐insulating GaAs substrate , 1978 .

[5] O. Nakada,et al. Mesa-stripe-geometry double-heterostructure injection lasers , 1973 .

[6] C. A. Liechti,et al. Microwave Field-Effect Transistors--1976 , 1976 .