论文信息 - Optically pumped integrated absorber 3.4 μm laser with InAs-to-InGaAsSb type-II transition

Optically pumped integrated absorber 3.4 μm laser with InAs-to-InGaAsSb type-II transition

We report optically pumped lasing at λ∼3.4 μm from an integrated absorber structure in which the electrons confined in the InAs quantum wells recombine with holes in adjacent InGaAsSb layers to provide the gain. This type-II laser exhibits an estimated photon-to-photon conversion rate of ∼24% at 85 K. The self-consistent empirical pseudopotential method calculations suggest that Coulomb attraction can lead to a strong enhancement in carrier overlap, and the resulting small shift in transition energy is consistent with that observed.

[1] Christopher L. Felix,et al. Role of internal loss in limiting type-II mid-IR laser performance , 1998 .

[2] Christopher L. Felix,et al. Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells , 1998 .

[3] Christopher L. Felix,et al. High-temperature continuous-wave 3–6.1 μm “W” lasers with diamond-pressure-bond heat sinking , 1999 .

[4] I. Vurgaftman,et al. Continuous-wave type-II "QW" lasers emitting at /spl lambda/=5.4-7.1 μm , 1999, IEEE Photonics Technology Letters.

[5] Gregory H. Olsen,et al. Above-room-temperature optically pumped midinfrared W lasers , 1998 .

[6] H. Q. Le,et al. Low-loss high-efficiency and high-power diode-pumped mid-infrared GaInSb/InAs quantum well lasers , 1998 .

[7] Jerry R. Meyer,et al. Type‐II quantum‐well lasers for the mid‐wavelength infrared , 1995 .

[8] Gregory C. Dente,et al. Pseudopotential methods for superlattices: Applications to mid-infrared semiconductor lasers , 1999 .

[9] Y. Cuminal,et al. Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures , 1997 .