Local Strain Induced Band Gap Modulation and Photoluminescence Enhancement of Multilayer Transition Metal Dichalcogenides
暂无分享,去创建一个
Jong-Hyun Ahn | Krishna P. Dhakal | Won Seok Yun | Jeongyong Kim | Jong-Hyun Ahn | H. Jang | K. Dhakal | Jeongyong Kim | Xiang Chen | Hyunmin Kim | Shrawan Roy | Houk Jang | Xiang Chen | Hyunmin Kim | Jae Dong Lee | W. Yun | Shrawan Roy | Houk Jang
[1] Jeongyong Kim,et al. Spectroscopic Visualization of Grain Boundaries of Monolayer Molybdenum Disulfide by Stacking Bilayers. , 2015, ACS nano.
[2] C. Battaglia,et al. Strain-induced indirect to direct bandgap transition in multilayer WSe2. , 2014, Nano letters.
[3] Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers. , 2013, Nature communications.
[4] Changgu Lee,et al. Efficient Excitonic Photoluminescence in Direct and Indirect Band Gap Monolayer MoS2. , 2015, Nano letters.
[5] W. Zhang 张,et al. Electronic structures and elastic properties of monolayer and bilayer transition metal dichalcogenides MX2 (M = Mo, W; X = O, S, Se, Te): A comparative first-principles study , 2015, 1505.01640.
[6] Origin of indirect optical transitions in few-layer MoS2, WS2, and WSe2. , 2013, Nano letters.
[7] G. Ryu,et al. On-stack two-dimensional conversion of MoS2 into MoO3 , 2016, 2008.03926.
[8] Bennett B. Goldberg,et al. Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2. , 2016, Nano letters.
[9] A. Radenović,et al. Single-layer MoS2 transistors. , 2011, Nature nanotechnology.
[10] A. Castellanos-Gómez,et al. Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain. , 2015, Nanoscale.
[11] J. Rogers,et al. Quantum confinement effects in transferrable silicon nanomembranes and their applications on unusual substrates. , 2013, Nano letters.
[12] Kan Wang,et al. Lattice strain effects on the optical properties of MoS2 nanosheets , 2014, Scientific Reports.
[13] F. Guinea,et al. Strong Modulation of Optical Properties in Black Phosphorus through Strain-Engineered Rippling. , 2015, Nano letters.
[14] T.-H. Cheng,et al. Strain-enhanced photoluminescence from Ge direct transition , 2010 .
[15] D. Duong,et al. Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2. , 2014, Nanoscale.
[16] Junyong Kang,et al. Strain-induced direct–indirect bandgap transition and phonon modulation in monolayer WS2 , 2015, Nano Research.
[17] C. D. Walle,et al. Effects of strain on band structure and effective masses in MoS$_2$ , 2012 .
[18] F. Guinea,et al. Strain engineering in semiconducting two-dimensional crystals , 2015, Journal of physics. Condensed matter : an Institute of Physics journal.
[19] Keliang He,et al. Orientation of luminescent excitons in layered nanomaterials. , 2013, Nature nanotechnology.
[20] Fengnian Xia,et al. Strong light–matter coupling in two-dimensional atomic crystals , 2014, Nature Photonics.
[21] M. Arroyo,et al. Understanding and strain-engineering wrinkle networks in supported graphene through simulations , 2014 .
[22] L. Chu,et al. Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. , 2012, ACS nano.
[23] Yong Ju Park,et al. Graphene-based conformal devices. , 2014, ACS nano.
[24] P. Ajayan,et al. Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide , 2015, Nature Communications.
[25] Sefaattin Tongay,et al. Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2. , 2012, Nano letters.
[26] Gang Hee Han,et al. Characterization of the structural defects in CVD-grown monolayered MoS2 using near-field photoluminescence imaging. , 2015, Nanoscale.
[27] J. Shan,et al. Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2. , 2013, Nano letters.
[28] Hongzheng Chen,et al. Graphene-like two-dimensional materials. , 2013, Chemical reviews.
[29] Chen Wang,et al. Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics , 2013 .
[30] Coskun Kocabas,et al. Graphene-enabled electrically switchable radar-absorbing surfaces , 2015, Nature Communications.
[31] Jingbo Li,et al. Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering. , 2015, Nano letters.
[32] J. Shan,et al. Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.
[33] Young Hee Lee,et al. Biexciton Emission from Edges and Grain Boundaries of Triangular WS₂ Monolayers. , 2016, ACS nano.
[34] Sefaattin Tongay,et al. Elastic properties of chemical-vapor-deposited monolayer MoS2, WS2, and their bilayer heterostructures. , 2014, Nano letters.
[35] Jed I. Ziegler,et al. Bandgap engineering of strained monolayer and bilayer MoS2. , 2013, Nano letters.
[36] Yong-Wei Zhang,et al. Quasiparticle band structures and optical properties of strained monolayer MoS 2 and WS 2 , 2012, 1211.5653.
[37] Francisco Guinea,et al. Local strain engineering in atomically thin MoS2. , 2013, Nano letters.
[38] Liangzhi Kou,et al. Anisotropic Ripple Deformation in Phosphorene. , 2015, The journal of physical chemistry letters.