We report on the design, growth, fabrication and characterization of monolithic wavelength division multiplexed (WDM) laser array transmitter and receiver chips produced by the Canadian Solid State Optoelectronics Consortium. The transmitter chip includes multiple, discrete wavelength, distributed Bragg reflector (DBR) laser diodes monolithically integrated with waveguide combiners fabricated using an InGaAs/GaAs heterostructure. The corresponding wavelength demultiplexer unit is based on a Rowland circle grating spectrometer monolithically integrated with a metal-semiconductor-metal (MSM) detector array fabricated on an InGaAs/AlGaAs/GaAs heterostructure. The epitaxial layer wafers for both transmitter and receiver modules were grown in single molecular beam epitaxy (MBE) runs.