Semiconductor measurement technology: A FORTRAN program for calculating the electrical parameters of extrinsic silicon

1

[1]  R. L. Watters,et al.  Direct Measurement of the Dielectric Constants of Silicon and Germanium , 1953 .

[2]  G. Macfarlane,et al.  FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI , 1957 .

[3]  C. Herring,et al.  Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering , 1956 .

[4]  David C. Lewis,et al.  Resistivity and Carrier Lifetime in Gold-Doped Silicon , 1973 .

[5]  W. Murray Bullis,et al.  Electrical Properties of n‐Type Silicon Doped with Gold , 1968 .

[6]  S. Li,et al.  The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon , 1977 .

[7]  William Paul,et al.  Dielectric constant of germanium and silicon as a function of volume , 1959 .

[8]  Lawrence F. Shampine,et al.  Numerical computing: An introduction , 1973 .

[9]  N. Sclar,et al.  Resistivity and deep impurity levels in silicon at 300 K , 1977, IEEE Transactions on Electron Devices.

[10]  H. Levinstein,et al.  Impurity and Lattice Scattering Parameters as Determined from Hall and Mobility Analysis in n-Type Silicon , 1973 .

[11]  H. D. Barber.  Effective mass and intrinsic concentration in silicon , 1967 .

[12]  Harvey Brooks,et al.  Theory of the Electrical Properties of Germanium and Silicon , 1955 .

[13]  R. L. Watters,et al.  Drift and Conductivity Mobility in Silicon , 1956 .

[14]  E. Conwell,et al.  Electrical Properties of N -Type Germanium , 1954 .

[15]  R. L. Mattis,et al.  Resistivity‐Dopant Density Relationship for Phosphorus‐Doped Silicon , 1980 .