High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links

A monolithic integrated transimpedance amplifier for the receiver in a 40-Gb/s optical-fiber TDM system has been fabricated in an InP-based HBT technology. Despite its high gain (transimpedance of 2 k/spl Omega/ in the limiting mode, 10 k/spl Omega/ in the linear mode) the complete amplifier was realized on a single chip. Clear output eye diagrams were measured up to 43 Gb/s under realistic driving conditions. The voltage swing of 0.6 V/sub pp/ at the differential 50 /spl Omega/ output does not change within the demanded input dynamic range of 6 dB. At the upper input current level even 48 Gb/s were achieved. The power consumption is approximately 600 mW at a single supply voltage of -5.5 V.

[1]  M. Pfost,et al.  Modeling and measurement of substrate coupling in Si-bipolar IC's up to 40 GHz , 1998 .

[2]  U. Langmann,et al.  A 12.5 Gb/s Si bipolar IC for PRBS generation and bit error detection up to 25 Gb/s , 1993 .

[3]  T. F. Meister,et al.  40 Gbit/s transimpedance amplifier in SiGe bipolar technology for the receiver in optical-fibre TDM links , 1998 .

[4]  Adele E. Schmitz,et al.  An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronic ICs , 1995, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.

[5]  Martin Pfost,et al.  Simulation of Substrate Coupling with Special Regard to Shielding in High-Speed Si/SiGe Bipolar ICs , 1999, 1999 29th European Microwave Conference.

[6]  Hans-Martin Rein,et al.  60 Gbit/s time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique , 1997 .

[7]  Hans-Martin Rein,et al.  Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s , 1996, IEEE J. Solid State Circuits.

[8]  Hans-Martin Rein.  Si AND SiGe BIPOLAR ICs FOR 10 TO 40 Gb/s OPTICAL-FIBER TDM LINKS , 1998 .

[9]  Michael Schroter,et al.  A compact bipolar transistor model for very-high-frequency applications with special regard to narrow emitter stripes and high current densities , 1993 .

[10]  Hans-Martin Rein,et al.  Low-noise, high-gain Si-bipolar preamplifiers for 10 Gb/s optical-fiber links-design and realization , 1996 .