论文信息 - Fully integrated concurrent dual-band low noise amplifier with suspended inductors in SiGe 0.35 μm BiCMOS technology

Fully integrated concurrent dual-band low noise amplifier with suspended inductors in SiGe 0.35 μm BiCMOS technology

A fully integrated concurrent dual-band low noise amplifier with suspended inductors is reported. Wideband input impedance matching and wideband low noise characteristics are achieved by the proposed capacitive feedback technique simultaneously. Measurement results show input return losses of -12.8 and -11.5 dB, voltage gains of 14.4 and 14.3 dB, and noise figures of 2.5 and 3.0 measured at 2.3 and 4.5 GHz, respectively, with an image rejection ratio of 26.1 dB and power consumption of 11.9 mW.

Shey-Shi Lu | Yu-Tso Lin | Tyng-Guey Wang

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