Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency

Significant progress in the power conversion efficiency and brightness of InGaN-based light emitting diodes (LEDs) has paved the way for these devices to be considered for LED lighting. In this realm, however, the efficiency must be retained at high injection levels in order to generate the lumens required. Unfortunately, LEDs undergo a monotonic efficiency degradation starting at current densities even lower than 50 A/cm2 which would hinder LED insertion into the general lighting market. The physical origins for the loss of efficiency retention are at present a topic of intense debate given its enormous implications. This paper reviews the current status of the field regarding the mechanisms that have been put forward as being responsible for the loss of efficiency, such as Auger recombination, electron overflow (spillover), current crowding, asymmetric injection of electrons and holes, and poor transport of holes through the active region, the last one being applicable to multiple quantum well designs. While the Auger recombination received early attention, increasing number of researchers seem to think otherwise at the moment in that it alone (if any) cannot explain the progressively worsening loss of efficiency reduction as the InN mole fraction is increased. Increasing number of reports seems to suggest that the electron overflow is one of the major causes of efficiency degradation. The physical driving force for this is likely to be the relatively poor hole concentration and transport, and skewed injection favoring electrons owing to their relatively high concentration. Most intriguingly there is recent experimental convincing evidence to suggest that quasi-ballistic electrons in the active region, which are not able to thermalize within the residence time and possibly longitudinal optical phonon lifetime, contribute to the carrier overflow which would require an entirely new thought process in the realm of LEDs.