A new flexible scatterometer for critical dimension metrology.

At Physikalisch-Technische Bundesanstalt, the National Metrology Institute of Germany, a new type of deep ultraviolet scatterometer has been developed and set up. The concept of the system is very variable and versatile, so that many different types of measurements, e.g., classical scatterometry, ellipsometric scatterometry, polarization-dependent reflectometry, and ellipsometry can be performed. The main application is the characterization of linewidth/critical dimension (CD), grating period (pitch), and edge profile of periodically nanostructured surfaces mainly, but not only, on photomasks. Different operation wavelength between 840 and 193 nm can be used, giving also access to a variety of different at-wavelength metrology connected with state-of-the-art photolithography. It allows to adapt and to vary the measurand and measurement geometry to optimize the sensitivity and the unambiguity for the measurement problem. In this paper the concept, design, and performance of the system is described in detail. First measurement examples are shown and current and future applications are discussed.

[1]  H. Hofer,et al.  Nonlinearity of the quantum efficiency of Si reflection trap detectors at 633 nm , 1998 .

[2]  Matthias Wurm,et al.  Metrology capabilities and performance of the new DUV scatterometer of the PTB , 2007, European Mask and Lithography Conference.

[3]  Ray Hoobler,et al.  Optical critical dimension (OCD) measurments for profile monitoring and control: applications for mask inspection and fabrication , 2003, SPIE Photomask Technology.

[4]  Jan Richter,et al.  Comparative scatterometric CD measurements on a MoSi photo mask using different metrology tools , 2008, Photomask Technology.

[5]  Alexander Gray,et al.  Fast nondestructive optical measurements of critical dimension uniformity and linearity on AEI and ASI phase-shift masks , 2006, SPIE Photomask Technology.

[6]  A. Rathsfeld,et al.  Optimal sets of measurement data for profile reconstruction in scatterometry , 2007, SPIE Optical Metrology.

[7]  M. Totzeck,et al.  Numerical simulation of high-NA quantitative polarization microscopy and corresponding near-fields , 2001 .

[8]  Angela Duparre,et al.  System for angle-resolved and total light scattering, transmittance, and reflectance measurements of optical components at 157 nm and 193 nm , 2003, SPIE Laser Damage.

[9]  D. Flagello,et al.  Polarization effects associated with hyper-numerical-aperture (>1) lithography , 2005 .

[10]  Jiangtao Hu,et al.  Scatterometry based CD and profile metrology of MoSi/quartz structures , 2005, SPIE Photomask Technology.

[11]  A. Rathsfeld,et al.  Mathematical modelling of indirect measurements in scatterometry , 2006 .

[12]  E. Palik Handbook of Optical Constants of Solids , 1997 .

[13]  C. G. Frase,et al.  Results of a round robin measurement on a new CD mask standard , 2005, Other Conferences.

[14]  Bernd Bodermann,et al.  Investigation and evaluation of scatterometric CD metrology methods , 2005, SPIE Optical Metrology.