Simultaneous Measurements of Drain-to-Source Current and Carrier Injection Properties of Top-Contact Pentacene Thin-Film Transistors

Drain-to-source current (IDS ¼ð IDISÞ=2) and displacement current (Idis ¼ IS þ ID) are evaluated using the simultaneous measurements of source (IS) and drain (ID) currents during the application of a constant drain voltage and a triangular-wave gate voltage (VGS) to top-contact pentacene thin-film transistors. The carrier mobility, threshold voltages and mean potential drops at the source/channel and channel/drain interface are simultaneously obtained from IDS-VGS and Idis-VGS relationships. Carrier injection properties, namely, the carrier injection voltage at the source electrode and the mean potential drop-VGS relathionship are discussed on the basis of results of the simultaneous measurements of IDS and Idis. (DOI: 10.1143/JJAP.46.390)

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