Simultaneous optimization of confinement and thermal performance for heteroepitaxial InP on SoI hybrid lasers

In new designs permitted by heteroepitaxial bonding of III-V active slabs onto nano-patterened SoI wafers, two constraints arise in the design: optical confinement and thermal performance. One require less silicon for the former and more silicon for the latter. We propose a mitigation strategy based on electromagnetism and a flip-flop algorithm.

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