论文信息 - The high-temperature oxidation, reduction, and volatilization reactions of silicon and silicon carbide

The high-temperature oxidation, reduction, and volatilization reactions of silicon and silicon carbide

A thermochemical analysis was made of the oxidation, reduction, and volatilization reactions which occur in the Si-O-C system. One characteristic feature is the high SiO(g) and SiO(g) + CO(g) pressures at the Si(s)-SiO2 and SiC(s)-SiO2(s) interfaces. Active oxidation with weight losses and passive oxidation with weight gains were found on oxidizing Si(s) and SiC(s) in low oxygen pressures above 1000°C. Rapid oxidation was related to the SiO(g) and SiO(g) + C0(g) pressures at the Si(s) or SiC(s)-SiO2(s) interfaces.

Earl A. Gulbransen | E. A. Gulbransen | Sven A. Jansson | S. A. Jansson

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