Thickness dependence of the properties of highly c-axis textured AlN thin films

The influence of film thickness on the material properties of aluminum nitride (AlN) thin films deposited on Pt(111) electrodes has been investigated experimentally by means of x-ray diffraction, dielectric response, atomic force microscopy, interferometry measurement of effective d(33), and residual stress measurement. The thickness was varied between 35 nm and 2 mum. Full width at mid-height of the rocking curve decreased from 2.60 to 1.14degrees, rms roughness increased from 3.8 to 18.6 Angstrom, the effective d(33), namely d(33f), from 2.75 to 5.15 pm/V. The permittivity epsilon(AIN) was stable at 10.2, whereas the dielectric losses decreased from 1% to 0.1%. The breakdown electric field under do voltages varied between 4.0 and 5.5 MV/cm. (C) 2004 American Vacuum Society.

[1]  T. Ida,et al.  Quantitative basis for the rocking‐curve measurement of preferred orientation in polycrystalline thin films , 2003 .

[2]  Substrate-polarity dependence of AlN single-crystal films grown on 6H-SiC(0001) and (0001) by molecular beam epitaxy , 2003 .

[3]  Ying-Chung Chen,et al.  The characteristics of surface acoustic waves on AlN/LiNbO3 substrates , 2003 .

[4]  Wolfgang Brand,et al.  Piezoelectric thin AlN films for bulk acoustic wave (BAW) resonators , 2003 .

[5]  Y. Takagaki,et al.  Surface-Acoustic-Wave Delay Line at 24 GHz Using the Guided Rayleigh Mode in AlN/SiC Structures , 2003 .

[6]  Y. Chen,et al.  Composite substrate material for surface acoustic-wave oscillator , 2003 .

[7]  K. Yoon,et al.  Growth of highly c-axis textured AlN films on Mo electrodes for film bulk acoustic wave resonators , 2003 .

[8]  Dependence of the Surface, the Structural, and the Optical Properties on the Thickness of the AIN Buffer Layer for GaN Epilayers Grown on Sapphire Substrates , 2002 .

[9]  G. A. Farias,et al.  The Role of Interfaced Modes in the Raman Spectra of AlN/InN Superlattices , 2002 .

[10]  P. Santos,et al.  Guided propagation of surface acoustic waves in AlN and GaN films grown on 4H-SiC(0001) substrates , 2002 .

[11]  K. Yoon,et al.  Influence of electrode configurations on the quality factor and piezoelectric coupling constant of solidly mounted bulk acoustic wave resonators , 2002 .

[12]  F. Litimein,et al.  The electronic structure of wurtzite and zincblende AlN: an ab initio comparative study , 2002 .

[13]  M. Sluiter,et al.  Nano-Indentation Hardness and Elastic Moduli of Bulk Single-Crystal AlN , 2002 .

[14]  Sören Berg,et al.  Structural and electroacoustic studies of AlN thin films during low temperature radio frequency sputter deposition , 2001 .

[15]  Paul Muralt,et al.  Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering , 2001 .

[16]  Charles Surya,et al.  Piezoelectric coefficient of aluminum nitride and gallium nitride , 2000 .

[17]  Effect of gas and cathode material on the r.f. hollow cathode reactive PVD , 1999 .

[18]  Judith A. Ruffner,et al.  Effect of substrate composition on the piezoelectric response of reactively sputtered AlN thin films , 1999 .

[19]  Paul Muralt,et al.  Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications , 1999 .

[20]  P. Muralt,et al.  Aluminum nitride thin films for high frequency applications , 1999 .

[21]  H. Kakiuchi,et al.  Molecular beam epitaxial growth of AlN single crystalline films on Si (111) using radio-frequency plasma assisted nitrogen radical source , 1998 .

[22]  Nava Setter,et al.  Interferometric measurements of electric field-induced displacements in piezoelectric thin films , 1996 .

[23]  G. Dormans,et al.  Measurement of piezoelectric coefficients of ferroelectric thin films , 1994 .

[24]  H. Okano,et al.  GHz-Band Surface Acoustic Wave Devices Using Aluminum Nitride Thin Films Deposited by Electron Cyclotron Resonance Dual Ion-Beam Sputtering , 1993 .

[25]  K. Tsubouchi,et al.  Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films , 1985, IEEE Transactions on Sonics and Ultrasonics.