Microstrip and suspended substrate GaAs bias-T

For photodiode bias-Ts in optoelectronic ICs > 20dB isolation is essential at 2.5-10 GHz for the photodiode to work at both 2.5 and 10 Gbit/s. Designed micro strip and suspended substrate GaAs bias-Ts show 30-140 dB isolation and measured values are approximately 30 dB in the 2.5-10 Ghz range.