A monolithic IGBT gate driver for intelligent power modules implemented in 0.8 μm high voltage (50 V) CMOS process

This paper discusses the design and implementation of a monolithic IGBT gate driver for intelligent power modules (IPMs). The objective of this work is to design and implement a monolithic IGBT gate driver IC with efficient protection functions in a high-voltage (50 V) 0.8-μm CMOS process. The gate driver is designed for medium power applications, such as home appliances. It includes low-voltage logic, 5-V logic regulator, analog control circuitry, high-voltage (50 V) high-current output drivers, and protection circuitry.

[1]  A.R. Hefner.  An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT) , 1990, 21st Annual IEEE Conference on Power Electronics Specialists.

[2]  Christoph Kuratli,et al.  Implementation of High Peak-Current IGBT Gate-Drive Circuits in a VLSI Compatible BiCMOS Technology , 1995, ESSCIRC '95: Twenty-first European Solid-State Circuits Conference.

[3]  A. Galluzzo,et al.  A new driving circuit for IGBT devices , 1995 .

[4]  C.A.T. Salama,et al.  A monolithic IGBT gate driver implemented in a conventional 0.8 /spl mu/m BiCMOS process , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[5]  T. Yamada,et al.  A high voltage intelligent power module (HVIPM) with a high performance gate driver , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).