Nonlinear Kinetics of GaAs MOVPE Examined by Selective Area Growth Technique

Two-dimensional or three-dimensional numerical simulation on growth rate nonuniformity of selective area metallorganic vapor phase epitaxy (SA-MOVPE) in sub-millimeter scale can extract real surface kinetics, which is normally hindered by mass transport rate of film precursors. Nonlinear surface kinetics is introduced to analyze group-III precursor concentration dependency of SA-MOVPE for the first time and surface reaction rate constant (k n s ) of adsorbed species and adsorption equilibrium constant (K) are extracted from GaAs-MOVPE at 575°C. The effect of misorientation angle (Φ) of GaAs(100) substrate on these kinetic parameters was examined. It was found that k n s is about 3.4 X 10 -5 mol m -2 s -1 independent of Φ, whereas K ranged from 6.9 to 12 X 10 5 m 3 mol -1 dependent on Φ. The obtained value of k n s can be converted to lifetime of adsorbed species on GaAs surface and it is 0.3 s. This is mostly the same with gas-phase decomposition rate of trimethylgallium and supports the accuracy of our nonlinear kinetic analysis.

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