论文信息 - Prospect of tunneling green transistor for 0.1V CMOS

Prospect of tunneling green transistor for 0.1V CMOS

Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8″ wafers. Large ION at low VDD are possible according to TCAD simulations but awaits verification. VDD scaling will greatly benefit from low (effective) band gap energy, which may be provided by type II heterojunctions of Si/Ge or compound semiconductors.

[1] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.

[2] Martin,et al. Theoretical calculations of heterojunction discontinuities in the Si/Ge system. , 1986, Physical review. B, Condensed matter.

[3] Vogl,et al. Electronic-band parameters in strained Si1-xGex alloys on Si1-yGey substrates. , 1993, Physical review. B, Condensed matter.

[4] Jeffrey Bokor,et al. International Symposium on VLSI Technology, Systems, and Applications, Proceedings , 1997 .

[5] A. Asenov,et al. Si/SiGe heterostructure parameters for device simulations , 2004 .

[6] Byung-Gook Park,et al. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec , 2007, IEEE Electron Device Letters.