论文信息 - Algan photodetectors grown on Si(111) by molecular beam epitaxy

Algan photodetectors grown on Si(111) by molecular beam epitaxy

Abstract The fabrication and characterisation of Al x Ga 1− x N (0⩽ x ⩽0.35) photodetectors grown on Si(1 1 1) by molecular beam epitaxy are described. For low Al contents ( x =0−0.35), a UV/visible contrast higher than 10 3 , and a time response of ∼20 ns, in the same order of magnitude as for devices on sapphire substrate. GaN-based p–n ultraviolet photodiodes on Si(1 1 1) are reported for the first time.

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