论文信息 - Steady‐state photocarrier grating technique for diffusion‐length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi‐insulating GaAs

Steady‐state photocarrier grating technique for diffusion‐length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi‐insulating GaAs

The theory underlying the steady‐state photocarrier grating technique is presented, including the effect of surface recombination. Experimental results for amorphous hydrogenated silicon and semi‐insulating GaAs prove that diffusion lengths ranging from 200 A to 10 μm can be measured with an accuracy of better than 5%.

[1] Weiser,et al. Ambipolar drift-length measurement in amorphous hydrogenated silicon using the steady-state photocarrier grating technique. , 1986, Physical review. B, Condensed matter.

[2] William Shockley,et al. The Mobility and Life of Injected Holes and Electrons in Germanium , 1951 .

[3] A. R. Moore. Photoelectromagnetic effect in amorphous silicon , 1980 .

[4] K. Weiser,et al. Determination of bandtail parameters and recombination mechanisms in a-Si:H by comparative study of photoabsorption and photoconductivity , 1985 .

[5] A. R. Moore,et al. Surface photovoltage measurement of light instability of amorphous silicon films , 1986 .

[6] A. R. Moore,et al. Relationship between collection length and diffusion length in amorphous silicon , 1984 .

[7] Eli Zeldov,et al. Steady-state photocarrier grating technique for diffusion length measurement in photoconductive insulators , 1986 .

[8] A. R. Moore. Theory and experiment on the surface‐photovoltage diffusion‐length measurement as applied to amorphous silicon , 1983 .

[9] S. Wagner,et al. Differential surface photovoltage measurement of minority‐carrier diffusion length in thin films , 1985 .

[10] M. Shur,et al. Intensity dependence of the minority‐carrier diffusion length in amorphous silicon based alloys , 1984 .