A Parallel Intelligent OPC Technique for Design and Fabrication of VLSI Circuit

We in this paper develop a parallel intelligent optical proximity correction technique for process distortion compensation of layout mask. This approach integrates an improved genetic algorithm, the rule- and model-based methods, and a parallel domain decomposition algorithm to perform the mask correction on a Linux-based PC cluster with message passing interface libraries. Testing on several fundamental patterns and application to VLSI circuits, this approach shows good correction accuracy and efficiency. Benchmark results, such as speedup, and parallel efficiency are achieved and exhibit excellent parallel performance. This is a constructive approach to developing advanced computer aided design tools for design and fabrication of integrated circuits.

[1]  Chuan-Sheng Wang,et al.  A Genetic Algorithm Approach to InGaP/GaAs HBT Parameter Extraction and RF Characterization , 2003 .

[2]  Wojciech Maly,et al.  Analysis of the impact of proximity correction algorithms on circuit performance , 1999 .

[3]  Avideh Zakhor,et al.  Binary and phase shifting mask design for optical lithography , 1992 .

[4]  Yiming Li,et al.  Intelligent BSIM4 Model Parameter Extraction for Sub-100 nm MOSFET Era , 2004 .

[5]  L. Cherfils.  A parallel and adaptive continuation method for semilinear bifurcation problems , 1998 .

[6]  Yiming Li,et al.  A Two-Dimensional Quantum Transport Simulation of Nanoscale Double-Gate MOSFETs Using Parallel Adaptive Technique , 2004, IEICE Trans. Inf. Syst..

[7]  Christophe Pierrat,et al.  Automated optical proximity correction: a rules-based approach , 1994, Advanced Lithography.

[8]  F.M. Schellenberg,et al.  Adoption of OPC and the impact on design and layout , 2001, Proceedings of the 38th Design Automation Conference (IEEE Cat. No.01CH37232).

[9]  Michael L. Rieger,et al.  Fast proximity correction with zone sampling , 1994, Advanced Lithography.

[10]  Yen-Yu Cho,et al.  Intelligent BSIM4 Model Parameter Extraction for Sub-100 nm MOSFET Era , 2004 .

[11]  Hiroyoshi Tanabe,et al.  Fast optical proximity correction: analytical method , 1995, Advanced Lithography.

[12]  Yongkang Guo,et al.  New approaches to optical proximity correction in photolithography , 1999 .

[13]  H. Hopkins.  On the diffraction theory of optical images , 1953, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

[14]  Yiming Li,et al.  A Genetic Algorithm Approach to InGaP/GaAs HBT Parameters Extraction and RF Characterization , 2002 .

[15]  Avideh Zakhor,et al.  Fast optical and process proximity correction algorithms for integrated circuit manufacturing , 1998 .