论文信息 - Fabrication of low-loss thin film microstrip line on low-resistivity silicon for RF applications

Fabrication of low-loss thin film microstrip line on low-resistivity silicon for RF applications

A detail fabricating process and characterization of thin film microstrip line (TFML) on low K polyimide, used for interconnects in radio frequency integrated circuits (RFICs) technology, is reported in this study. By incorporating a spin-on dielectric polyimide and sputtering of aluminum, the TFML is fabricated on low-cost low-resistivity silicon (LRS) substrate (@r=<[email protected]). The TFML with a thickness of [email protected] polyimide dielectric layer presents attenuation losses of 0.385dB/mm at 25GHz and 0.438dB/mm at 50GHz. Effective dielectric constant and attenuation of TFML on polyimide are carefully investigated and discussed.

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