Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors

Abstract. We calculate the luminescence of the dilute quaternary InAs(N,Sb). The incorporation of N leads to a reduction of the energy gap of the host InAs and Sb acts as a surfactant, improves the N incorporation, and further reduces the bandgap. This is thus extremely relevant for devices operating in the mid-infrared (MIR) spectral range from 3 to 5  μm. In order to describe this system, the theory starts with the band anticrossing model applied to both conduction and the valence band to generate inputs for analytical approximations that lead to luminescence spectra, including plasma screening, bandgap renormalization, and excitonic enhancements. Direct application of the equations leads to good agreement with some recent experimental data.

[1]  Photon emission induced by elastic exciton-carrier scattering in semiconductor quantum wells , 2005, cond-mat/0509492.

[2]  Wladek Walukiewicz,et al.  Valence band anticrossing in mismatched III-V semiconductor alloys , 2007 .

[3]  A. Aissat,et al.  Effect of on band alignment of compressively strained Ga1−xInxNy As1−y−zSbz/GaAs quantum well structures , 2010 .

[4]  Ionization degree of the electron-hole plasma in semiconductor quantum wells , 1999, cond-mat/9906100.

[5]  V. Pereira.  Analytical solutions for the optical absorption of semiconductor superlattices. , 1995, Physical review. B, Condensed matter.

[6]  A. Krier,et al.  Molecular beam epitaxial growth of InAsN:Sb for midinfrared Optoelectronics , 2008 .

[7]  E. O’Reilly,et al.  Self-consistent Green's function method for dilute nitride conduction band structure , 2014, Journal of physics. Condensed matter : an Institute of Physics journal.

[8]  M. Bugajski,et al.  Optical characterisation of vertical-external-cavity surface-emitting lasers (VECSELs) , 2007 .

[9]  I. A. Faragai,et al.  Coupling of THz radiation with intervalence band transitions in microcavities. , 2014, Optics express.

[10]  Mauro Pereira,et al.  TERA-MIR radiation: materials, generation, detection and applications , 2014 .

[11]  P. H. Jefferson,et al.  Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys , 2005 .

[12]  Hao-Hsiung Lin,et al.  Energy gap reduction in dilute nitride GaAsSbN , 2008 .

[13]  R. Binder,et al.  Theory of nonlinear optical absorption in coupled-band quantum wells with many-body effects , 1994 .

[14]  J. Misiewicz,et al.  Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys , 2011 .

[15]  J. Misiewicz,et al.  Temperature dependence of photoluminescence from InNAsSb layers: The role of localized and free carrier emission in determination of temperature dependence of energy gap , 2013 .

[16]  Jerry R. Meyer,et al.  Band parameters for nitrogen-containing semiconductors , 2003 .

[17]  Mauro Pereira,et al.  Microscopic approach for intersubband-based thermophotovoltaic structures in the terahertz and mid-infrared , 2011 .

[18]  Jerry R. Meyer,et al.  Band parameters for III–V compound semiconductors and their alloys , 2001 .

[19]  Mauro Pereira,et al.  The linewidth enhancement factor of intersubband lasers: From a two-level limit to gain without inversion conditions , 2016 .

[20]  Handong Sun,et al.  Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth , 2009 .

[21]  Mauro F. Pereira,et al.  Analytical solutions for semiconductor luminescence including Coulomb correlations with applications to dilute bismides , 2017 .

[22]  M. Bugajski,et al.  Photoluminescence mapping and angle-resolved photoluminescence of MBE-grown InGaAs/GaAs RC LED and VCSEL structures , 2002 .

[23]  D. Hommel,et al.  High‐density effects, stimulated emission, and electrooptical properties of ZnCdSe/ZnSe single quantum wells and laser diodes , 1996 .