New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs quantum dot (QD) arrays with high optical quality from the first layer of QDs formed on the patterned substrate. The main result is the development of a patterning technology that allows the engineering of customized geometrical displays of QDs with the same optical quality as those formed spontaneously on flat non-patterned substrates.

[1]  G. Salamo,et al.  Survival of atomic monolayer steps during oxide desorption on GaAs (100) , 2006 .

[2]  David A. Ritchie,et al.  Molecular beam epitaxial growth of site-controlled InAs quantum dots on pre-patterned GaAs substrates , 2006, Microelectron. J..

[3]  M. Schramboeck,et al.  Nano-patterning and growth of self-assembled quantum dots , 2006, Microelectron. J..

[4]  M. Martín-González,et al.  Ordered InAs QDs using prepatterned substrates by monolithically integrated porous alumina , 2006 .

[5]  O. Schmidt,et al.  Photoluminescence from seeded three-dimensional InAs∕GaAs quantum-dot crystals , 2006 .

[6]  Ricardo Garcia,et al.  Ordered InAs quantum dots on pre-patterned GaAs (0 0 1) by local oxidation nanolithography , 2005 .

[7]  Pierre M. Petroff,et al.  Deterministic Coupling of Single Quantum Dots to Single Nanocavity Modes , 2005, Science.

[8]  Leon Abelmann,et al.  Fabrication of patterned magnetic nanodots by laser interference lithography , 2005 .

[9]  O. Schmidt,et al.  Growth of three-dimensional quantum dot crystals on patterned GaAs (001) substrates , 2004 .

[10]  Changbao Huang,et al.  Thermal redistribution of photocarriers between bimodal quantum dots , 2001 .

[11]  James S. Speck,et al.  Controlled ordering and positioning of InAs self-assembled quantum dots , 2000 .

[12]  C. McConville,et al.  Atomic hydrogen cleaning of polar III–V semiconductor surfaces , 1998 .

[13]  Z. Lu,et al.  Ultraviolet‐ozone oxidation of GaAs(100) and InP(100) , 1993 .

[14]  A. Ruiz,et al.  Atomic layer molecular beam epitaxy (Almbe) of III–V compounds: Growth modes and applications , 1989 .

[15]  J. Vig.  UV/ozone cleaning of surfaces , 1976 .

[16]  Mats-Erik Pistol,et al.  In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode , 1996 .