Integrated Hybrid Silicon Transmitters

We review recent progress made on the hybrid silicon platform towards realizing an integrated WDM transmitter on silicon. Using ion implantation enhanced quantum well intermixing, four band gaps are integrated on a single chip and used to demonstrate a DFB laser-EAM array. The latest results on design changes to improve Mach-Zender and EA modulator performance are also described and the prospects for fabricating an integrated terabit per second transmitter on silicon are presented.

[1]  R. Michalzik,et al.  40 Gbit/s operation of laser-integrated electroabsorption modulator using identical InGaAlAs quantum wells , 2005, International Conference on Indium Phosphide and Related Materials, 2005.

[2]  U. Gösele,et al.  SemiConductor Wafer Bonding: Science and Technology , 1998 .

[3]  Y. Vlasov,et al.  Losses in single-mode silicon-on-insulator strip waveguides and bends. , 2004, Optics express.

[4]  Qianfan Xu,et al.  Micrometre-scale silicon electro-optic modulator , 2005, Nature.

[5]  T. Baba,et al.  Very Compact Arrayed-Waveguide-Grating Demultiplexer Using Si Photonic Wire Waveguides , 2004 .

[6]  Tao Mei,et al.  Single step quantum well intermixing with multiple band gap control for III-V compound semiconductors , 2004 .

[7]  J. Bowers,et al.  Integrated Microwave Photonic Filter on a Hybrid Silicon Platform , 2010, IEEE Transactions on Microwave Theory and Techniques.

[8]  J. Bowers,et al.  III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects , 2010 .

[9]  Di Liang,et al.  Photonic Integration on the Hybrid Silicon Evanescent Device Platform , 2008 .

[10]  Jurgen Michel,et al.  High performance, waveguide integrated Ge photodetectors. , 2007, Optics express.

[11]  V. Lal,et al.  Monolithically integrated active components: a quantum-well intermixing approach , 2005, IEEE Journal of Selected Topics in Quantum Electronics.

[12]  F. Xia,et al.  Ultracompact optical buffers on a silicon chip , 2007 .

[13]  S. Shirai,et al.  120/spl deg/C 10-gb/s uncooled direct Modulated 1.3-/spl mu/m AlGaInAs MQW DFB laser diodes , 2004, IEEE Photonics Technology Letters.

[14]  Hyundai Park,et al.  A continuous-wave hybrid AlGaInAs-silicon evanescent laser , 2006, IEEE Photonics Technology Letters.

[15]  L. F. Tiemeijer,et al.  Characterization of Butt-Joint InGaAsP Waveguides and Their Application to 1310 nm DBR-Type MQW Gain-Clamped Semiconductor Optical Amplifiers , 1997 .

[16]  H. L. Park,et al.  Dielectric cap disordering of GaAs/AIGaAs multiple quantum well by using plasma enhanced chemical vapour deposited SiN capping layer , 1995 .

[17]  M. Paniccia,et al.  A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor , 2004, Nature.

[18]  D. Miller,et al.  Strong quantum-confined Stark effect in germanium quantum-well structures on silicon , 2005, Nature.

[19]  Omri Raday,et al.  Integration of hybrid silicon lasers and electroabsorption modulators. , 2008, Optics express.

[20]  Geza Kurczveil,et al.  Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing. , 2011, Optics express.

[21]  John E. Bowers,et al.  Forty Gb/s hybrid silicon Mach-Zehnder modulator with low chirp. , 2011, Optics express.

[22]  Gray Lin,et al.  Comparison of 1300 nm quantum well lasers using different material systems , 2002 .

[23]  M. Morse,et al.  31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate. , 2007, Optics express.

[24]  L. Coldren,et al.  Impurity-free Disordering of InGaAs/InGaAlAs Quantum Wells on InP by Dielectric Thin Cap Films and Characterization of Its In-plane Spatial Resolution , 1996 .

[25]  Akihide Sano,et al.  Very high-speed light-source module up to 40 Gb/s containing an MQW electroabsorption modulator integrated with a DFB laser , 1997 .

[26]  J. Marsh.  Quantum well intermixing , 1993 .

[27]  Masataka Shirai,et al.  Wide temperature range, from 0 to 85/spl deg/C, operation of a 1.55 /spl mu/m, 40 Gbit/s InGaAlAs electro-absorption optical modulator , 2005 .

[28]  Sung June Kim,et al.  Bandgap tuning of In0.53Ga0.47As/InP multiquantum well structure by impurity free vacancy diffusion using In0.53Ga0.47As cap layer and SiO2 dielectric capping , 1997 .

[29]  Andrew Alduino,et al.  Demonstration of a high speed 4-channel integrated silicon photonics WDM link with hybrid silicon lasers , 2010, 2010 IEEE Hot Chips 22 Symposium (HCS).

[30]  Urban Westergren,et al.  50 Gb/s hybrid silicon traveling-wave electroabsorption modulator. , 2011, Optics express.

[31]  Gregory Raybon,et al.  Widely tunable distributed Bragg reflector laser with an integrated electroabsorption modulator , 1992 .

[32]  Assia Barkai,et al.  Integrated hybrid silicon triplexer. , 2010, Optics express.

[33]  T. Yamanaka,et al.  Design and Fabrication of Low-Driving-Voltage Electroabsorption Modulators Operating at 40 Gb/s , 2007, Journal of Lightwave Technology.

[34]  Qianfan Xu,et al.  Silicon microring resonators with 1.5-μm radius , 2008 .

[35]  Hui-Wen Chen,et al.  25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode. , 2010, Optics express.

[36]  Di Liang,et al.  Device and Integration Technology for Silicon Photonic Transmitters , 2011, IEEE Journal of Selected Topics in Quantum Electronics.

[37]  H. Wada,et al.  1.3 /spl mu/m EAM-integrated DFB lasers for 40 Gb/s very-short-reach application , 2003, OFC 2003 Optical Fiber Communications Conference, 2003..

[38]  Jeremy Witzens,et al.  CMOS Photonics Using Germanium Photodetectors , 2006 .

[39]  Di Liang,et al.  Hybrid Integrated Platforms for Silicon Photonics , 2010, Materials.

[40]  J. Landreau,et al.  Very simple approach for high performance DFB laser-electroabsorption modulator monolithic integration , 1994 .

[41]  Stefan Nilsson,et al.  Selective Area Regrowth of Butt-joint Coupled Waveguides in Multi-section DBR Lasers , 1992 .

[42]  A. C. Bryce,et al.  Control of multiple bandgap shifts in InGaAs-AlInGaAs multiple-quantum-well material using different thicknesses of PECVD SiO2 protection layers , 2000, IEEE Photonics Technology Letters.

[43]  I. Kaminow,et al.  Propagation characteristics of partially loaded two-conductor transmission line for broadband light modulators , 1963 .

[44]  M. Aoki,et al.  InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD , 1993 .

[45]  C. J. Armistead,et al.  The design assessment of lambda /4 phase-shifted DFB laser structures , 1989 .

[46]  A hybrid silicon evanescent electroabsorption modulator , 2008, OFC/NFOEC 2008 - 2008 Conference on Optical Fiber Communication/National Fiber Optic Engineers Conference.