论文信息 - SiC and Si3N4 inclusions in multicrystalline silicon ingots - 字舞流文

SiC and Si3N4 inclusions in multicrystalline silicon ingots

A. Soiland | E. Øvrelid | O. Lohne | T. Engh | J. Tuset | Ø. Gjerstad | E.J Øvrelid | T.A Engh | J.K Tuset

[1] Q. Sun,et al. Effect of carbon on oxygen precipitation in silicon , 1990 .

[2] P. Fraundorf,et al. Infrared absorption study on carbon and oxygen behavior in Czochralski silicon crystals , 1985 .

[3] H. Jennings. On reactions between silicon and nitrogen , 1983 .

[4] J. Mukerji,et al. Effect of Iron, Titanium, and Hafnium on Second‐Stage Nitriding of Silicon , 1981 .

[5] L. Kaufman,et al. Origin of SiC Impurities in Silicon Crystals Grown from the Melt in Vacuum , 1979 .

[6] K. Ravi,et al. Electrical effects of SiC inclusions in EFG silicon ribbon solar cells , 1976 .

[7] Y. Endo,et al. Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor Silicon , 1973 .

[8] R. Newman,et al. The solubility of carbon in pulled silicon crystals , 1971 .

[9] R. Newman,et al. Vibrational absorption of carbon and carbon-oxygen complexes in silicon , 1969 .

[10] C. D. Thurmond,et al. Nitrogen in Silicon , 1959 .