Structural analysis of ELO-GaN grown on sapphire using the x-ray micro-beam of an 8-GeV storage ring
暂无分享,去创建一个
M. Ikeda | Y. Kudo | Y. Tsusaka | J. Matsui | H. Narui | S. Tomiya | S. Takeda | T. Miyajima | Kyoko Watanabe | S. Goto | H. Kurihara | N. Hara | M. Kato
[1] R. F. Davis,et al. White X‐ray microbeam analysis of strain and crystallographic tilt in GaN layers grown by maskless pendeoepitaxy , 2005 .
[2] Y. Tsusaka,et al. Structure analysis of ELO‐GaN using a 2 × 4 μm2 micro‐beam X‐ray of an 8‐GeV storage ring , 2003 .
[3] Masao Ikeda,et al. High-Power AlGaInN Laser Diodes with High Kink Level and Low Relative Intensity Noise , 2002 .
[4] Hiroshi Nakajima,et al. Dislocations in GaN-based laser diodes on epitaxial lateral overgrown GaN layers , 2001 .
[5] M. Ikeda,et al. Threading Dislocations and Optical Properties of GaN and GaInN , 2001 .
[6] S. Uchida,et al. AlGaInN high-power lasers grown on an ELO-GaN layer , 2000 .
[7] M. Ikeda,et al. Dependence of crystallographic tilt and defect distribution on mask material in epitaxial lateral overgrown GaN layers , 2000 .
[8] Theeradetch Detchprohm,et al. Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy , 1993 .