论文信息 - Improving the reliability of InAs quantum-dot laser diodes for silicon photonics: the role of trapping layers and misfit-dislocation density - 字舞流文

Improving the reliability of InAs quantum-dot laser diodes for silicon photonics: the role of trapping layers and misfit-dislocation density

J. Bowers | M. Meneghini | G. Meneghesso | E. Zanoni | C. de Santi | Y. Wan | C. Shang | R. Herrick | E. Hughes | M. Buffolo | M. Zenari