Quaternary InAlGaN quantum‐dot ultraviolet light‐emitting diode emitting at 335 nm fabricated by anti‐surfactant method

In order to realize high-efficiency ultraviolet (UV) light-emitting diodes (LEDs) or low threshold current UV laser diodes (LDs), group-III nitride quantum dots (QDs) are very attractive. We fabricated quaternary InAlGaN quantum dots (QDs) using an anti-surfactant method. The InAlGaN-QDs were grown by low-pressure metal-organic chemical-vapor deposition (MOCVD) on an InAlGaN buffer surface treated by a silicon anti-surfactant. The lateral size and height of the self-assemble InAlGaN QDs were 8-18 nm and 5-8 nm respectively as observed by the atomic force microscope (AFM). We observed intense photoluminescence (PL) from the InAlGaN QDs at room temperature (RT). We also fabricated an InAlGaN-QD UV-LED on a high-quality AlN/AlGaN buffer template grown on a sapphire substrate. We obtained current injection emission of the InAlGaN-QD UV-LED with the wavelength of 335nm under RT CW operation. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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