A method of manufacturing an integrated circuit

The method of fabricating an integrated circuit is of the type comprising the steps of: - forming above a top surface of a substrate (5) at least one dielectric layer (15) extending on a surface sub core (12), the dielectric layer (15) having an upper surface (25) and a flank (40) extending between the upper surface (25) and the underlying surface (12); and - forming an electrical structure (70) piece of electrically conductive material, comprising a structural member (75) extending on the upper surface (25) of the dielectric layer (15) and an interconnect member ( 80) extending from the structural element (75) along the flank (40) to the underlying surface (12). According to one aspect of the invention, the flank (40) has a greater than 10 .mu.m height, and the electrical structure (70) is formed by depositing the electrically conductive material by simultaneously depositing the structural element (75) the upper surface (25) of the dielectric layer (15) and the interconnecting member (80) on the flank (40).