MMIC power amplifier based on AlGaN/GaN HEMTs at 10 GHz

A monolithic microwave integrated circuit power amplifier consisting of one 8/spl times/100 /spl mu/m AlGaN/GaN transistor has been realised. At 10 GHz the coplanar amplifier delivers 35.7 dBm continuous-wave (CW) output power corresponding to a power density of 4.6 W/mm with 26% maximum power added efficiency (PAE) at the bias point V/sub DS/=40 V. Reducing the bias to V/sub DS/=25 V results in 34.2 dBm maximum CW output power with 32% PAE at 10 GHz.

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