Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study

We present a full-quantum approach to investigate self-heating effects in nanoelectronic devices and exploit it to simulate rough nanowire field-effect transistors. Self-heating is found to significantly contribute (up to about 16%) to the degradation of the transistor performances, with an impact that is stronger for stronger roughness. The mechanism at the origin of the enhanced backscattering is the temperature increase due to the thermal conductivity reduction and the consequent increase of electron-phonon coupling.

[1]  Ferry,et al.  Surface roughness at the Si(100)-SiO2 interface. , 1985, Physical review. B, Condensed matter.

[2]  Datta,et al.  Energy balance and heat exchange in mesoscopic systems. , 1992, Physical review. B, Condensed matter.

[3]  F. Brotzen,et al.  Thermal conductivity of thin SiO2 films , 1992 .

[4]  Sui,et al.  Effect of strain on phonons in Si, Ge, and Si/Ge heterostructures. , 1993, Physical review. B, Condensed matter.

[5]  Krishna Shenai,et al.  Scaling constraints imposed by self-heating in submicron SOI MOSFET's , 1995 .

[6]  S. Datta,et al.  Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches , 2002 .

[7]  Natalio Mingo,et al.  Phonon transport in nanowires coated with an amorphous material: An atomistic Green’s function approach , 2003 .

[8]  Yiying Wu,et al.  Thermal conductivity of individual silicon nanowires , 2003 .

[9]  M. Lundstrom,et al.  On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors , 2005, IEEE Transactions on Electron Devices.

[10]  Avik W. Ghosh,et al.  Theoretical investigation of surface roughness scattering in silicon nanowire transistors , 2005, cond-mat/0502538.

[11]  Gerhard Klimeck,et al.  On the Validity of the Parabolic Effective-Mass Approximation for the Current-Voltage Calculation of , 2005 .

[12]  A. Cresti,et al.  Theoretical imaging of current profiles in two-dimensional devices , 2006 .

[13]  Eric Pop,et al.  Heat Generation and Transport in Nanometer-Scale Transistors , 2006, Proceedings of the IEEE.

[14]  Madhu Menon,et al.  Thermal conductivity in thin silicon nanowires: phonon confinement effect. , 2007, Nano letters.

[15]  Wolfgang Fichtner,et al.  Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations , 2007 .

[16]  A. Asenov,et al.  A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs , 2007, IEEE Transactions on Electron Devices.

[17]  M. Fischetti,et al.  Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity , 2007 .

[18]  Mark Lundstrom,et al.  Simulation of Carbon Nanotube FETs Including Hot-Phonon and Self-Heating Effects , 2007 .

[19]  A. Majumdar,et al.  Enhanced thermoelectric performance of rough silicon nanowires , 2008, Nature.

[20]  Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs , 2008, IEEE Transactions on Electron Devices.

[21]  A. Gnudi,et al.  Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation , 2008, IEEE Transactions on Electron Devices.

[22]  D. Vasileska,et al.  Modeling Thermal Effects in Nanodevices , 2008 .

[23]  D. Vasileska,et al.  Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering , 2008, 0806.4323.

[24]  E. Pop,et al.  Impact of phonon-surface roughness scattering on thermal conductivity of thin si nanowires. , 2009, Physical review letters.

[25]  M. Mouis,et al.  Three-Dimensional Real-Space Simulation of Surface Roughness in Silicon Nanowire FETs , 2009, IEEE Transactions on Electron Devices.

[26]  D. Vasileska,et al.  Self-Heating Effects in Nanoscale FD SOI Devices: The Role of the Substrate, Boundary Conditions at Various Interfaces, and the Dielectric Material Type for the BOX , 2009, IEEE Transactions on Electron Devices.

[27]  M. Pala,et al.  Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs , 2009, IEEE Electron Device Letters.

[28]  E. Bano,et al.  Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs , 2009, Nanotechnology.

[29]  Giulia Galli,et al.  Atomistic simulations of heat transport in silicon nanowires. , 2009, Physical review letters.

[30]  M. Luisier,et al.  Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling , 2010 .

[31]  M. Luisier.  Investigation of thermal transport degradation in rough Si nanowires , 2011 .

[32]  G. Ghibaudo,et al.  A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs , 2011, IEEE Transactions on Electron Devices.

[33]  I. Knezevic,et al.  Thermoelectric properties of ultrathin silicon nanowires , 2012 .

[34]  Dragica Vasileska,et al.  Current progress in modeling self-heating effects in FD SOI devices and nanowire transistors , 2012 .

[35]  D. Esseni,et al.  Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs , 2012, IEEE Electron Device Letters.

[36]  M. Luisier.  Atomistic modeling of anharmonic phonon-phonon scattering in nanowires , 2012 .

[37]  M. Luisier,et al.  Self-heating effects in ultra-scaled Si nanowire transistors , 2013, 2013 IEEE International Electron Devices Meeting.

[38]  P. Dollfus,et al.  New insights into self-heating in double-gate transistors by solving Boltzmann transport equations , 2014 .

[39]  M. Luisier,et al.  Atomistic modeling of coupled electron-phonon transport in nanowire transistors , 2014 .

[40]  B. Kaczer,et al.  Experimental validation of self-heating simulations and projections for transistors in deeply scaled nodes , 2014, 2014 IEEE International Reliability Physics Symposium.

[41]  Mathieu Luisier,et al.  Influence of anharmonic phonon decay on self-heating in Si nanowire transistors , 2014 .

[42]  D. Rideau,et al.  Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches , 2013, 1310.1704.

[43]  Umberto Ravaioli,et al.  A Conjoined Electron and Thermal Transport Study of Thermal Degradation Induced During Normal Operation of Multigate Transistors , 2014, IEEE Transactions on Electron Devices.