Development of a compact model of the GaN HEMT for power switching applications

A compact model for the high-voltage GaN HEMT is presented here, aimed at power switching applications. The model is based on a behavioural model for radio-frequency HEMTs, and adapted to fit power GaN HEMT characteristics. It is suitable for circuit and system simulation, matching on-state operation closely for both an experimental lateral device and a simulated vertical device. Switching simulations are also demonstrated.