A1GaN/GaN Field Effect Transistors Based on Lateral Schottky Barrier Gates as Millimeter Wave Detectors
暂无分享,去创建一个
W. Knap | S. Rumyantsev | P. Prystawko | G. Cywiński | I. Yahniuk | K. Nowakowski-Szkudlarek | M. Słowikowski | P. Wiśniewski | J. Przybytek | B. Stonio | P. Sai | D. But
[1] G. Simin,et al. Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications , 2018 .
[2] Mikhail I. Dyakonov. Generation and detection of Terahertz radiation by field effect transistors , 2010, 1103.4316.
[3] Gintaras Valušis,et al. Current driven resonant plasma wave detection of terahertz radiation: Toward the Dyakonov–Shur instability , 2008 .