论文信息 - Switching Power Reduction in Phase Change Memory Cell Using CVD Ge2Sb2Te5 and Ultrathin TiO2 Films - 字舞流文

Switching Power Reduction in Phase Change Memory Cell Using CVD Ge2Sb2Te5 and Ultrathin TiO2 Films

Byung Joon Choi | Seol Choi | C. Hwang | K. Yi | K. Kim | Y. C. Shin | S. Hong | Seung-Hwan Oh | Taeyong Eom | Hae-Chan Park | Y. Kim | T. S. Baek