A comprehensive study on Schottky barrier nanowire transistors (SB-NWTs): Principle, physical limits and parameter fluctuations

P-type Schottky barrier nanowire transistors (p-SB-NWTs) are computational studied in this paper. We analyzed the working principle and physical limits on their performance in details. The impact of Schottky contact of SB-NWTs on the current drivability, gate control and RF performance are studied comparing with conventional silicon nanowire transistors (SNWTs). It is pointed out that the inferior performance of SB-NWTs can not be solved by changing the S/D or channel materials. On the other hand, small Vt, Ft and on-off ratio fluctuation caused by process variation on channel diameter are observed, which is an advantage of SB-NWTs.