Effects of copper in high resistivity cadmium telluride

[1]  P. Siffert,et al.  Evolution of resistivity along Cl-compensated THM grown cadmium telluride crystals , 1987 .

[2]  P. Siffert,et al.  About the origin of the 0.15 to 0.20 eV defect level in cadmium telluride , 1987 .

[3]  J. Merz,et al.  Luminescence study of rapid thermal annealing of ion implantation damage in cadmium telluride , 1986 .

[4]  J. Merz,et al.  Luminescence investigation of copper diffusion into cadmium telluride , 1986 .

[5]  P. Siffert,et al.  Accurate evaluations of thermally stimulated current curves and defect parameters for CdTe crystals , 1985 .

[6]  J. Merz,et al.  Flash annealing of copper and krypton ion implants in cadmium telluride , 1985 .

[7]  T. C. Mcgill,et al.  Electronic properties of deep levels in p‐type CdTe , 1983 .

[8]  P. Siffert,et al.  Properties of electroless gold contacts on p-type cadmium telluride , 1983 .

[9]  J. Varvas,et al.  Defect Structure of Cu-Doped Cadmium Selenide , 1982 .

[10]  G. Neumark,et al.  Effect of deep levels on semiconductor carrier concentrations in the case of , 1982 .

[11]  J. Pautrat,et al.  Shallow Acceptors in Cadmium Telluride , 1982 .

[12]  J. Jerhot,et al.  Copper impurity behaviour in CdTe films , 1980 .

[13]  H. Grimmeiss,et al.  Thermal‐ and optical‐excitation processes in GaP : Cu , 1978 .

[14]  R. Bell,et al.  Characterization of the Transport Properties of Halogen-Doped CdTe Used for Gamma-Ray Detectors , 1974 .

[15]  P. Siffert,et al.  Improvements in the purification of cadmium telluride by zone refining , 1970 .

[16]  A. Tasch,et al.  Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments , 1970 .

[17]  M. Lorenz,et al.  Shallow and deep acceptor states in CdTe , 1963 .