Recombination lifetimes in undoped and doped ZnCdSe laser structures

The carrier recombination dynamics in doped and undoped ZnCdSe quantum well structures are presented using time-resolved photoluminescence spectroscopy. Measurements were performed at room temperature as a function of excitation intensity upto lasing densities of 10 19 cm -3 . A simple rate equation model enabled us to determine the relative contributions from the radiative and non-radiative recombination mechanisms to the photoluminescence lifetime. This model showed good agreement with results obtained for undoped structures. In contrast, the interpretation of results obtained for pn doped laser structures was found to be more difficult due to the presence of carrier trapping at defects. A model developed to take account of carrier trapping gives a good fit to the lifetimes for the doped structures.

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