Remarkable charge-trapping efficiency of the memory device with (TiO2)0.8(Al2O3)0.1 composite charge-storage dielectric

A memory device p-Si/SiO2/(TiO2)0.8(Al2O3)0.1(TAO-81)/Al2O3/Pt was fabricated, in which a composite of two high-k dielectrics with a thickness of 1 nm was employed as the charge-trapping layer to enhance the charge-trapping efficiency of the memory device. At an applied gate voltage of ±9 V, TAO-81 memory device shows a memory window of 8.83 V in its C-V curve. It also shows a fast response to a short voltage pulse of 10−5 s. The charge-trapping capability, the endurance, and retention characteristics of TAO-81 memory device can be improved by introducing double TAO-81 charge-trapping layers intercalated by an Al2O3 layer. The charge-trapping mechanism in the memory device is mainly ascribed to the generation of the electron-occupied defect level in the band gap of Al2O3 induced by the inter-diffusion between TiO2 and Al2O3.

[1]  Yidong Xia,et al.  The interface inter-diffusion induced enhancement of the charge-trapping capability in HfO2/Al2O3 multilayered memory devices , 2013 .

[2]  Hao Zhu,et al.  Design and Fabrication of Ta$_{2}$O $_{5}$ Stacks for Discrete Multibit Memory Application , 2013, IEEE Transactions on Nanotechnology.

[3]  Yidong Xia,et al.  The effect of thermal treatment induced inter-diffusion at the interfaces on the charge trapping performance of HfO2/Al2O3 nanolaminate-based memory devices , 2013 .

[4]  Yidong Xia,et al.  Impact of the interfaces in the charge trap layer on the storage characteristics of ZrO2/Al2O3 nanolaminate-based charge trap flash memory cells , 2013 .

[5]  Heeyoung Jeon,et al.  Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications , 2012 .

[6]  T. Schram,et al.  Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx , 2011 .

[7]  Nanocrystalline ruthenium oxide embedded zirconium-doped hafnium oxide high-k nonvolatile memories , 2011 .

[8]  G. Eisenstein,et al.  Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals , 2011 .

[9]  Helmut Baumgart,et al.  Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells , 2011, Nanotechnology.

[10]  M. Halik,et al.  Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin‐Film Memory Transistors , 2010, Advanced materials.

[11]  T. P. Chen,et al.  Effect of annealing on charge transfer in Ge nanocrystal based nonvolatile memory structure , 2009 .

[12]  S. S. Mahato,et al.  Performance improvement of flash memory using AlN as charge-trapping Layer , 2009 .

[13]  Kailash Gopalakrishnan,et al.  Overview of candidate device technologies for storage-class memory , 2008, IBM J. Res. Dev..

[14]  Marc Heyns,et al.  Passivation of Ge ( 100 ) ∕ GeO2 ∕ high-κ Gate Stacks Using Thermal Oxide Treatments , 2008 .

[15]  Ying Yu,et al.  In situ Fenton reagent generated from TiO2/Cu2O composite film: a new way to utilize TiO2 under visible light irradiation. , 2007, Environmental science & technology.

[16]  T. Lei,et al.  Two-Bit Lanthanum Oxide Trapping Layer Nonvolatile Flash Memory , 2007 .

[17]  T. Lei,et al.  PolySi-SiO2-ZrO2-SiO2-Si Flash Memory Incorporating a Sol-Gel-Derived ZrO2 Charge Trapping Layer , 2006 .

[18]  Fu-Hsiang Ko,et al.  SONOS-type flash memory using an HfO/sub 2/ as a charge trapping layer deposited by the sol-gel spin-coating method , 2006, IEEE Electron Device Letters.

[19]  John Robertson,et al.  Defect energy levels in HfO2 high-dielectric-constant gate oxide , 2005 .

[20]  Kinam Kim,et al.  Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory , 2005 .

[21]  Y. Ikuhara,et al.  Theoretical study of defect structures in pure and titanium-doped alumina , 2004 .

[22]  Hideki Takeuchi,et al.  Observation of bulk HfO2 defects by spectroscopic ellipsometry , 2004 .

[23]  W. Chim,et al.  Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage Layer , 2004, IEEE Transactions on Electron Devices.

[24]  Tung-Sheng Chen,et al.  Performance improvement of SONOS memory by bandgap engineering of charge-trapping layer , 2004 .

[25]  L. Perniola,et al.  Chemical vapor deposition of Ge nanocrystals on SiO2 , 2003 .

[26]  J. Bu,et al.  Electrical characterization of ONO triple dielectric in SONOS nonvolatile memory devices , 2001 .

[27]  A. Rappe,et al.  Virtual-crystal approximation that works: Locating a compositional phase boundary in Pb(Zr 1-x Ti x )O 3 , 1999, cond-mat/9909032.

[28]  Toshiro Hiramoto,et al.  Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals , 1998 .

[29]  J. Lien,et al.  Degradations due to hole trapping in flash memory cells , 1989, IEEE Electron Device Letters.