Analysis and characterization of power MOSFETs for power converters energy&reliability-aware-design

This paper discusses the impact of Power MOSFETs (PMs) Capacitance-Voltage (C-V) characteristics on switching losses in power converters. A fast and robustly convergent numerical technique is adopted to analyze the sensitivity of PMs power losses with respect to their C-V shapes. Such technique helps both in identifying desirable specifications for PMs design, and in achieving appropriate selection of PMs for power converters energy&reliability aware design. The results presented in this paper, concerning loss analysis and experimental verification for a 85V to 170V@0.5A dc-dc boost converter, highlight the PMs C-V curves impact and the valuable support of the proposed technique in PMs design.

[1]  G. Consentino,et al.  A simplified and approximate power MOSFET intrinsic capacitance simulation: Theoretical studies, measures and comparisons , 2008, 2008 IEEE International Symposium on Industrial Electronics.

[2]  J. Brown,et al.  Modeling the switching performance of a MOSFET in the high side of a non-isolated buck converter , 2006, IEEE Transactions on Power Electronics.

[3]  Nicola Femia,et al.  A Versatile Method for MOSFET Commutation Analysis in Switching Power Converter Design , 2014, IEEE Transactions on Power Electronics.

[4]  T. Thiringer,et al.  MOSFET modeling adapted for switched applications using a state-space approach and internal capacitance characterization , 2009, 2009 International Conference on Power Electronics and Drive Systems (PEDS).

[5]  B. J. Baliga Advanced Power MOSFET Concepts , 2010 .

[6]  Sanjaya Maniktala,et al.  Switching power supplies A to Z , 2006 .

[7]  G. Verneau,et al.  Empirical power MOSFET modeling: practical characterization and simulation implantation , 2002, Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344).

[8]  G. Verneau,et al.  Power MOSFET switching waveforms: an empirical model based on a physical analysis of charge locations , 2002, 2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference. Proceedings (Cat. No.02CH37289).

[9]  T. Fujihira,et al.  Simulated superior performances of semiconductor superjunction devices , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[10]  Krishna Shenai,et al.  Modeling low-voltage power MOSFETs as synchronous rectifiers in buck converter applications , 2003, 38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003..