论文信息 - Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics

Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics

We have developed AlON high-k gate dielectric technology that can be easily implemented into both planar and trench SiC-based MOSFETs. On the basis of electrical characterization and numerical simulation, the thickness ratio of the AlON layer to the SiO2 interlayer and nitrogen content in AlON film were carefully optimized to enhance device performance and reliability.

[1] Tsunenobu Kimoto,et al. Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance , 2012 .

[2] F. Stern. Self-Consistent Results for n -Type Si Inversion Layers , 1972 .

[3] A. Yoshigoe,et al. Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties , 2011 .

[4] U. Lindefelt,et al. Doping-induced effects on the band structure in n-type 3C-, 2H-, 4H-, 6H-SiC, and Si , 1999 .

[5] Akitaka Yoshigoe,et al. Impact of Interface Defect Passivation on Conduction Band Offset at SiO2/4H-SiC Interface , 2012 .

[6] R. Wallace,et al. High-κ gate dielectrics: Current status and materials properties considerations , 2001 .

[7] Heiji Watanabe,et al. Reduction of Charge Trapping Sites in Al2O3/SiO2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices , 2011 .

[8] Kenji Fukuda,et al. Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing , 2000 .

[9] K. Ueno. Orientation Dependence of the Oxidation of SiC Surfaces , 1997 .

[10] A. Agarwal,et al. 1.1 kV 4H-SiC power UMOSFETs , 1997, IEEE Electron Device Letters.