Formation of nanoscale trenches and wires as a pathway to phase-separation in strained epitaxial Ge-Sn alloys
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[1] D. Williams,et al. Formation of Self-Assembled Quantum Wires during Epitaxial Growth of Strained GeSn Alloys on Ge(100): Trench Excavation by Migrating Sn Islands , 1998 .
[2] G. Abstreiter,et al. Fabrication and properties of epitaxially stabilized Ge/α-Sn heterostructures on Ge(001) , 1992 .
[3] S. Iyer,et al. Molecular beam epitaxy of metastable, diamond structure SnxGe1−x alloys , 1989 .
[4] Jenkins,et al. Electronic properties of metastable GexSn , 1987, Physical review. B, Condensed matter.