Temperature dependent growth of InGaN/GaN single quantum well

[1]  Jasprit Singh,et al.  Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting , 2009 .

[2]  A. G. Cullis,et al.  Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer , 2008 .

[3]  T. Song.  Strain relaxation due to V-pit formation in InxGa1−xN∕GaN epilayers grown on sapphire , 2005 .

[4]  T. Seong,et al.  Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots , 2005 .

[5]  D. S. Lee,et al.  AFM and temperature-dependent photoluminescence studies of the degree of localization induced by quantum-dot like states in InGaN single quantum well light emitting diodes grown by MOCVD on (0 0 0 1) sapphire , 2004 .

[6]  S. Mahajan,et al.  Compositional dependence of phase separation in InGaN layers , 2004 .

[7]  Y. Narukawa,et al.  Slip systems and misfit dislocations in InGaN epilayers , 2003 .

[8]  J. Chyi,et al.  Localized and quantum-well state excitons in AlInGaN laser-diode structure , 2002 .

[9]  C. Humphreys,et al.  Analysis of contacts and V-defects in GaN device structures by transmission electron microscopy. , 2001, Journal of electron microscopy.

[10]  Jeongyong Lee,et al.  Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density , 2001 .

[11]  Tao Wang,et al.  Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes , 2001 .

[12]  J. Bergman,et al.  Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells , 2000 .

[13]  J. Neugebauer,et al.  Indium induced changes in GaN(0001) surface morphology , 1999 .

[14]  Jörg Neugebauer,et al.  Surface energetics, pit formation, and chemical ordering in InGaN alloys , 1999 .

[15]  Wei-Kuo Chen,et al.  An Elucidation of Solid Incorporation of InGaN Grown by Metalorganic Vapor Phase Epitaxy , 1998 .

[16]  S. Denbaars,et al.  Spiral Growth of InGaN Nanoscale Islands on GaN , 1998 .

[17]  John C. Roberts,et al.  Effect of hydrogen on the indium incorporation in InGaN epitaxial films , 1997 .

[18]  Larry A. Coldren,et al.  Growth and characterization of bulk InGaN films and quantum wells , 1996 .

[19]  S. Nakamura,et al.  High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures , 1995 .

[20]  Takashi Matsuoka,et al.  Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy , 1991 .

[21]  J. Bergman,et al.  Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells , 2002 .

[22]  Robert F. Davis,et al.  Pinholes, Dislocations and Strain Relaxation in InGaN , 1998 .